JFET Series Connection

ABSTRACT

The invention relates to a switching device for switching a current between a first connection ( 1 ) and a second connection ( 2 ), comprising a series connection of at least two JFETs (J 1 -J 6 ), of which a lowest JFET (J 1 ) is connected to the first connection ( 1 ), or the lowest JFET (J 1 ) is connected in a cascade circuit to the first connection ( 1 ) via a control switch (M), and at least one further JFET (J 2 -J 5 ), which is connected in series to the lowest JFET (J 1 ), wherein the JFET (J 6 ) farthest away from the lowest JFET (J 1 ) is referred to as the uppermost JFET (J 6 ) and is connected with the drain connection to the second connection ( 2 ), and wherein a stabilization circuit (D 11 -D 53 ) is connected between the gate connections of the JFETs (J 1 -J 6 ) and the first connection ( 1 ) in order to stabilize the gate voltages of the JFETs (J 1 -J 6 ). An additional circuit ( 4 ), which draws the potential at the gate connection (G 6 ) of the uppermost JFET (J 6 ) to the potential at the drain connection (D 6 ) of the uppermost JFET (J 6 ), is switched between the gate connection (G 6 ) of the uppermost JFET (J 6 ) and the second connection ( 2 ).

The invention relates to the field of electronic circuit technology andin particular to a switching device with a series connection of JFETs(junction field effect transistors), according to the preamble of patentclaim 1

STATE OF THE ART

Power switches or switching devices for switching at high operatingvoltages may be realised in power-electronic switches by way ofcascading or arranging transistors in series. Thereby, according to U.S.Pat. No. 6,822,842 or DE 199 26 109 A1, such switch devices are forexample called a cascode circuit, which are based on the specialcircuiting-together of a MOSFET M and at least one JFET J₁, illustratedby FIG. 1. The switches are arranged between a first connection 1 and asecond connection 2 and are controlled by a control connection 7 of theMOSFET M. This known switch device for high operating voltages based oncascode topology envisages the connection of several JFETs J₂ . . .J_(i) in series, and thus the attainment of a high blocking voltage. Forthe protection of the JFETS, diodes, i.e. protective diodes D₁-D₅applied in blocking operation are connected to the gate connections ofthe JFETs. These protective diodes connect the gate connections of theJFETs amongst one another, or in each case lead from the gateconnections to a common connection 1 at a base potential, to which theMOSFET is also connected. The manner of functioning of the protectivediodes D₁-D₅ for the protection of the JEFTs is described in U.S. Pat.No. 6,822,842.

A non-uniform distribution of the blocking voltage across the JFETs mayarise due to different or too large junction capacitances of theprotective diodes D₁-D₅. Thereby, it is particularly with the uppermostJFET J₆ of FIG. 1 that a different capacitance acts in the gateconnection than with the lower JFETs. This different loading of the gateconnections may greatly influence the dynamic division of the blockingvoltage and lead to the uppermost transistor firstly taking up thecomplete voltage between the connections and being destroyed in theworst case.

DESCRIPTION OF THE INVENTION

It is therefore the object of the invention to provide a switchingdevice with a series connection of JFETs of the initially mentionedtype, which overcomes the mentioned disadvantages.

This object is achieved by a switching device with a series connectionof JFETs, with the features of patent claim 1.

The switching device for switching a current between a first connectionand a second connection thus comprises a series circuit of at least twoJFETs, of which a lowermost JFET is connected to the first connection oris connected to the first connection via a control switch arranged inseries. At least one further JFET is present, which is connected inseries to the lowermost JFET, wherein the JFET which is distancedfurthest to the lowermost JFET is indicated as the uppermost JFET andwith its drain connection is connected to the second connection. Astabilisation circuit for stabilising the gate voltages of the JFETS, isconnected between the gate connections of the JFETs and the firstconnection. Thereby, an additional circuit is connected between the gateconnection of the uppermost JFET and the second connection, and thisadditional circuit draws the potential at the gate connection of theuppermost JFET to the potential at the drain connection of the uppermostJFET and reduces the voltage.

By way of this, with the switched-on uppermost JFET, the voltage at thegate is kept slightly above, preferably however equal to the voltage atthe source connection, by which means when switching-off, the uppermostJFET remains switched on for longer than without the additional circuit.By way of this, one again prevents the complete voltage between thefirst and the second connection lying across the uppermost JFET.

The network with the stabilisation circuit and the additional circuithas the effect that JFETs which are arranged further to the top, areswitched off more slowly when switched off and are switched on morerapidly, preferably have synchronous switching-on points in time, thanJFETs which are arranged further below.

By way of this, the dynamic blocking voltage distribution of the powerswitch which is constructed with transistors arranged in series, isbalanced as well as stabilised due to the complete circuit network ofthe stabilisation circuit and additional circuit.

The stabilisation circuit seen per se, generally speaking and for eachof the JFETs, is capable of leading away a given current between itsgate connection and the first connection. The additional circuittogether with the stabilisation circuit effects a symmetrical voltageloading of the gate connections of the JFETs connected in series.

The series connection of the JFETs may be realised with an activation ofthe lowermost JFET in a cascode circuit. Thereby, the series connectioncomprises a control switch, for example a MOSFET which is connectedbetween the first connection and a lowermost JFET. Alternatively, theJFETs may also be activated differently, for example the lowermost JFETwith a direct activation of its gate connection by way of a drivercircuit.

The temporal behaviour of the passive activation of the uppermost JFET,if it is realised by one or more further diodes, may be set by way ofthe selection of the total junction capacitance of the series connectionof these further diodes. The junction capacitance may be set by way ofthe selection of the series further diodes and/or by way of the designof the individual further diodes. The complete blocking voltage orbreakdown voltage of one or more diodes between the drain and gate ofthe uppermost JFET is selected at least approximately equally as withthe remaining JFETs.

In a further preferred embodiment of the invention, the junctioncapacitance of the further diodes is kept low and instead of this acapacitance between the second connection and the gate of the uppermostJFET (and also of the further JFETs) is set by way of separate elementssuch as capacitors. The rapid switching behaviour may be optimised byway of an additional symmetrising network which is formed in thismanner. The symmetrising network thus comprises a RC-network which isarranged between the gates of the JFETs and the first connection. Forexample, the gates in each case of successive JFETS are connected to afurther capacitance in each case by a series connection of a resistanceto a further capacitance, and the gate of the uppermost JFET isconnected to the second connection by way of a preferably equallystructured additional RC-element.

In another preferred embodiment of the invention, the gates of the JFETsexcept for the lowermost JFET are connected to the first connection ineach case by a series connection of a resistance with a capacitance, andadditionally the gate of the uppermost JFET is connected to the secondconnection by way of an additional circuit, preferably an additionalRC-element of a series connection of a resistance with a furthercapacitance.

In a further preferred embodiment of the invention, the gates of theJFETs apart from the lowermost JFET are connected to the firstconnection in each case by way of a series connection of a resistancewith a capacitance, and additionally the gates of the JFET are connectedby way of one or more diodes to the second connection. The gate of theuppermost JFET is additionally connected to the second connection by wayof an additional circuit, preferably an additional RC-element of aseries connection of a resistance with a further capacitance.

In further preferred embodiments of the invention, a resistance fordamping is not present at each of the capacitances (or the furthercapacitance), but only at one or more, preferably at JFETs lying furtherabove.

Basically, a parallel connection of resistances to capacitances is alsopossible in the symmetrising network, however, with this, static lossesas a result of the occurring static voltage divider are caused in thetopology.

The symmetrising network is preferably designed such that balancingprocesses occurring in the course of a switching procedure, in thesymmetrising network, have the smallest time constant at the uppermostJFET and the largest time constant at the lowermost JFET. Accordingly,the capacitance of the additional RC-element (or of an additionalC-element) is smaller than the capacitance of the lowermost RC-element(or C-element) which is connected at the gate of the lowermost JFET.Preferably, the capacitance of the RC-elements or C-elements which lietherebetween successively increases from the top to the bottom. Thebalancing processes at the gates of the JFETs have balanced timeconstants due to the cooperation of the symmetrising network with thestabilisation circuit.

The effect of this is that—in comparison to the circuit without thesymmetrising network—when switching the transistors or JFETs off, withthe JFETs lying further to the top, it takes longer for the respectivegate connection to reach the potential of the pinch-off voltage withrespect to the respective source connection. By way of this, the upperJFETs remain switched on longer than the lower JFETs and accordingly theupper JFETs are switched off more slowly. Vice versa, the upper JEFTs onswitching on are switched-on more quickly than without the additionalcircuit and the symmetrising network. Ideally, one achieves a completelysynchronous switching-on and switching-off of all JFETs.

The temporal trajectories of the processes at the individual switchesare matched to one another due to the design of the symmetrisingnetwork, so that the switching arrangement as a whole has a behaviourwhich balanced in an as optimal as possible manner, thus a switching ofthe individual JFETs which is as simultaneous as possible.

In a further embodiment of the invention, the control switch, forexample a MOSFET is operated in the linear region. A damping ofoscillations which are produced by junction capacitances is achieved byway of this.

The stabilisation circuit thus together with the additional circuit andthe symmetrising network forms a dynamic voltage divider between thevoltage at the first and at the second connection, which when switchingtakes place smooths out the voltage loading of the JFETs. Differently tothe known power switches or switch devices for switching higheroperating voltages, the balancing of the dynamic blocking voltageloading of the transistors is significantly improved by way of addingthe additional circuit, for example by way of the additional diodes, andmoreover may be optimised in a targeted manner by way of an RC-circuitin a preferred embodiment of the invention.

Further preferred embodiments are to be deduced from the dependentpatent claims.

BRIEF DESCRIPTION OF THE DRAWINGS

The subject-matter of the invention is hereinafter explained in moredetail by way of preferred embodiment examples which are represented inthe accompanying drawings. In each case are schematically shown in:

FIG. 1 a series circuit of junction FETs according to the state of theart;

FIG. 2 a first embodiment of the invention;

FIG. 3 a second embodiment of the invention, and

FIG. 4 a further embodiment of the invention.

The reference numerals used in the drawings and their significance arelisted in a conclusive manner in the list of reference numerals.Basically, the same parts are provided with the same reference numeralsin the figures.

WAYS OF CARRYING OUT THE INVENTION

The invention for a switch device of a high operating voltage isrepresented in FIG. 1. The switch comprises a cascode circuit of aMOSFET M with a first or lowermost JFET J₁ and at least one further JFETJ₂-J₆ which is connected in series to this first JFET J₁. The lowermostor first JFET is therefore activated in the cascode circuit by a MOSFETacting as a control switch. The last JFET of the JFETs connected inseries and which is distanced furthest from the first JFET is indicatedas the uppermost JFET J₆. Merely by way of example, six JFETs are shown,but generally two or more JFETs may be present in other embodiments ofthe invention. A stabilisation circuit 3 is arranged for stabilising thegate voltages of the JFETs. This stabilisation circuit in each casebetween the gates of two consecutive JFETs comprises a series connectionof protective diodes D₁₁-D₁₃, D₂₁-D₂₃, . . . D₅₁-D₅₃ which are operatedin the blocking direction. The number of protective diodes D₁₁-D₅₃ whicheach lie in series with one another, depends on the required blockingvoltage of the protective diodes D₁₁-D₅₃. Generally, in each case, oneor more protective diodes D₁₁-D₅₃ may be preset between the gates of twosuccessive JFETs. Switch elements other than diodes are used in otherembodiments of the invention.

In each case Zener diodes (in FIG. 1: Z_(GS,2)-Z_(GS,6)) or resistances(in FIG. 2: Z_(Gs,2)-Z_(Gs,6)) are connected between the gate and thesource of the JFETs J₂-J₆, apart from the first JFET. These diodes orresistances stabilise the respective gate voltage in the stationarycondition.

An additional circuit 4 is connected between the gate and the drainconnection of the uppermost JFET for smoothing the voltage loading ofthe JFETs. This according to FIG. 2 comprises a series circuit of threefurther diodes D₆₁, D₆₂, D₆₃ which are operated in the blockingdirection. The effect of these is that the potential at the gateconnection of the uppermost JFET is drawn to the potential at the drainconnection of the uppermost JFET and thus that potential prevailingbetween the drain connection and the gate connection is reduced. Thefurther diodes D₆₁, D₆₂, D₆₃ ensure a symmetrical loading of the gateconnections and stabilise the blocking voltage distribution.Additionally, they act as a protective element for the uppermost JFET J₆against overvoltage between the drain and gate.

Instead of the further diodes, other switch elements may be present inthe additional circuit, which create the same effect, e.g. only one ortwo or further diodes connected in series, a resistance, a capacitanceor a RC-circuit.

In a preferred embodiment of the invention, a RC-element from a seriesconnection of a resistance or damping resonance R_(St,1)-R_(St,5) to acapacitance C_(Tu,1)-C_(Tu,5) are connected in each case between thegates of two successive JFETs, parallel to the one or more protectivediodes D₁₁-D₅₃ in each case. In this case, an analogous, preferablyequally structured RC-element is connected parallel to the additionalcircuit 4, also between the gate and the drain connection of theuppermost JFET. Together, all these mentioned RC-elements form asymmetrising network 5.

The complete circuit network then therefore has additional to n diodesD₆₁, D₆₂, D₆₃ and the passive RC-network has damping resistancesR_(St,1) . . . R_(St,6) and capacitances C_(Tu,1) . . . C_(Tu,6.)

The total junction capacitance which is added in each case between thegate connections may be kept small by way of the series connection ofthe diodes. This, thanks to the additional capacitances C_(Tu,1) . . .C_(Tu,6) permits the possibility of optimising the dynamic blockingvoltage distribution or setting it independently of the junctioncapacitances. Thereby, the additional damping resistances R_(St,1) . . .R_(St,6) are added, in order to damp oscillations caused by theadditional capacitances C_(Tu,1) . . . C_(Tu,6.)

FIG. 3 shows an alternative, preferred embodiment of the invention, inwhich the gates of the JFETs J₁-J₆ are not connected amongst oneanother, but in each case separately with its own circuit of protectivediodes D₁₁-D₅₃ and RC-element, to the first connection 1. As in FIG. 2,the gate connection G₆ of the uppermost JFET J₆ is connected via theadditional network 4 to the second connection 2. The additional network4 here may also comprise only one or more serially connected furtherdiodes D₆₁-D₆₃, or other switch elements or the further diodes D₆₁-D₆₃combined with a RC-series element R_(St,6), C_(Tu,6). The RC-elementsR_(St,1) . . . R_(St,6) and C_(Tu,1) . . . C_(Tu,6) which per se areoptional and are preferably applied for optimisation, here too togetherform the symmetrising network 5.

FIG. 4 shows a further embodiment of the invention in which the gates ofthe JFETs J₁-J₆ are not connected amongst one another, but in each caseseparately with their own circuit of protective diodes D₁₁-D₂₃, of oneor more additional diodes 6 which are connected by the respective gateconnection to the second connection and are connected to the firstconnection 1 via an RC-element. The protective diodes D₁₁-D₂₃ and theadditional diodes 6 in each cases form a voltage divider for the gatevoltage which may be individually parameterised with respect to thevoltage level and the dynamic behaviour (time constants). Instead of theindividual diodes 6 which are shown in the figure, several diodesconnected in series may be present. The additional network 4, as isarranged in FIG. 3, may also comprise one or more serially connectedfurther diodes D₆₁-F₆₃, or other switch elements, or the further diodesD₆₁-D₆₃ combined with an RC-series element R_(St,6), C_(Tu,6). TheRC-elements R_(St,1) . . . R_(St,6) and C_(Tu,1) . . . C_(Tu,6) whichare optional per se and are applied preferably for optimisation here tootogether form the symmetrising network 5.

For all examples and for the invention as a whole, it is basically thecase that the circuit, where appropriate may be analogously applied in amodified manner also for p-channel JFETs instead of the n-channel JFETswhich are shown here.

1-19. (canceled)
 20. A switching device for switching a current betweena first connection and a second connection, comprising: a seriesconnection of at least two JFETs of which a lowermost JFET is connectedto the first connection or the lowermost JFET is connected in a cascodecircuit via a control switch to the first connection; at least onefurther JFET which is connected in series to the lowermost JFET, whereinthe JFET which is distanced furthest from the lowermost JEFT isindicated as the uppermost JFET and with its drain connection isconnected to the second connection; wherein a stabilisation circuit forstabilizing the gate voltages of the JEFTs is connected between the gateconnection of the JEFTs and the first connection; and wherein anadditional circuit is connected between the gate connection of theuppermost JFET and the second connection, and this additional circuitdraws the potential at the gate connection of the uppermost JFET to thepotential at the drain connection of the uppermost JFET.
 21. Theswitching device according to claim 20, wherein the stabilisationcircuit in each case leads away a settable current from the gateconnections of the JFETs to the first connection, by way of protectivediodes which are operated in the blocking direction and which in eachcase are arranged between the gate connections of successive JFETs orbetween the gate connections of the JFETs and the first connection. 22.The switching device according to claim 20, wherein the additionalcircuit together with the stabilisation circuit effects a symmetricalvoltage loading of the gate connections of the JEFTs.
 23. The switchingdevice according to claim 20, wherein the additional circuit comprisesone or more further diodes which are operated in series and in theblocking direction between the gate connection of the uppermost JFET andthe second connection.
 24. The switching device according to claim 20,wherein the additional circuit is a passive network, said network beingconnected between the gate connection of the uppermost JEFT and thesecond connection.
 25. The switching device according to claim 20,wherein the stabilisation circuit in each case between the gateconnections of successive JFETS comprises at least one diode with afirst total blocking voltage, said diode being operated in the blockingdirection, and the additional circuit comprises at least one furtherdiode with a second total blocking voltage, said further diode beingoperated in the blocking direction, wherein the second total blockingvoltage at least approximately is equal to the first total blockingvoltage.
 26. The switching device according to claim 20, wherein asymmetrising network comprising an RC-network arranged between the gatesof the JFETs and the first connection is present.
 27. The switchingdevice according to claim 26, wherein the symmetrising network isdesigned such that balancing processes in the symmetrising network thatoccur when switching have the smallest time constant at the uppermostJFET and the largest time constant at the lowermost JEFT.
 28. Theswitching device according to claim 26, wherein the symmetrising networkin each case between the gate connections of successive JFETs comprisesa capacitanceand in parallel to the additional circuit comprises afurther capacitance, and a damping resistance is connected in series toat least one of the capacitances and to the further capacitance.
 29. Theswitching device according to claim 26, wherein the symmetrising networkin each case between the gate connections of successive JFETs, apartfrom the lowermost JFET and the first connection, comprises aRC-element, and comprises an additional RC-element parallel to theadditional circuit.
 30. The switching device according to claim 29,wherein the circuit comprises an activation circuit for activating thecontrol switch which operates this control switch in a linear range. 31.The switching device according to claim 21, wherein the additionalcircuit together with the stabilisation circuit effects a symmetricalvoltage loading of the gate connections of the JEFTs.
 32. The switchingdevice according to claim 21, wherein the additional circuit comprisesone or more further diodes which are operated in series and in theblocking direction between the gate connection of the uppermost JFET andthe second connection.
 33. The switching device according to claim 21,wherein a symmetrising network comprising an RC-network arranged betweenthe gates of the JFETs and the first connection is present.
 34. Theswitching device according to claim 24, wherein the passive network is aresistance.
 35. The switching device according to claim 33, wherein thesymmetrising network is designed such that balancing processes in thesymmetrising network that occur when switching have the smallest timeconstant at the uppermost JFET and the largest time constant at thelowermost JEFT.
 36. The switching device according to claim 26, whereinthe symmetrising network in each case between the gate connections ofsuccessive JFETs comprises a capacitanceand in parallel to theadditional circuit comprises a further capacitance, and a dampingresistance is connected in series to at least one of the capacitances orto the further capacitance.
 37. The switching device according to claim27, wherein the symmetrising network in each case between the gateconnections of successive JFETs, apart from the lowermost JFET and thefirst connection, comprises a RC-element, and comprises an additionalRC-element parallel to the additional circuit.
 38. The switching deviceaccording to claim 34, wherein the symmetrising network in each casebetween the gate connections of successive JFETs, apart from thelowermost JFET and the first connection, comprises a RC-element, andcomprises an additional RC-element parallel to the additional circuit.